Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB03N03LAG IPB03N03LAG

The IPB03N03LA G is an N-channel logic-level MOSFET designed for high-frequency dc/dc converters, housed in a PG-TO263-3-2 package. It has a continuous drain current rating of 80 A at 25 °C and 80 A at 100 °C, with a maximum drain-source on-resistance of 2.7 mΩ at 10 V gate voltage and 55 A drain current. The device supports a drain-source breakdown voltage of 25 V, operates at temperatures up to 175 °C, and is rated for 960 mJ single-pulse avalanche energy. It is RoHS compliant and meets JEDEC standards for target applications. The thermal resistance from junction to case is 1 K/W.