Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6849 2N6849

The 2N6849 is a P-channel power MOSFET in a hermetically sealed TO-205AF/TO-39 package, rated for -100V drain-to-source breakdown voltage and -6.5A continuous drain current, with a maximum on-state resistance of 0.30Ω at -10V gate-source bias. It features repetitive avalanche capability with 2.5mJ per pulse and a peak diode reverse recovery dv/dt of -5.5V/ns. The device is qualified to MIL-PRF-19500 for space applications and meets ESD Class 1C per MIL-STD-750, Method 1020. It operates from -55°C to +150°C junction temperature with a junction-to-case thermal resistance of 5.0°C/W.