Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC2909T-AA 2SC2909T-AA

The 2SC2909 is an NPN silicon transistor for high-voltage switching and AF 60W predriver applications, housed in a 3-pin SANYO NP package measuring 5.0 mm x 4.0 mm. It has a collector-to-emitter voltage rating of 160 V, collector current of 70 mA, and collector dissipation of 600 mW. With a junction temperature rating of 150°C and storage temperature range of -55°C to +150°C, it features a DC current gain (hFE) range of 100 to 400, gain-bandwidth product of 150 MHz, and output capacitance of 2.0 pF. The device exhibits fast switching with turn-on time of 0.1 µs, fall time of 0.2 µs, and storage time of 1.0 µs. The 2SC2909T-AA variant falls within this series, classified by hFE rank T (200 to 400).