Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB860-E 2SB860-E

The 2SB860 is a silicon PNP bipolar transistor designed for low-frequency power amplifier applications, such as TV vertical deflection output, typically used as a complementary pair with the 2SD1137. It is packaged in a TO-220AB case with a collector flange. The device has a collector-to-base voltage rating of -100 V, a collector-to-emitter voltage rating of -100 V, and a continuous collector current of -4 A. It supports a peak collector current of -5 A and has a maximum collector power dissipation of 1.8 W at 25°C, with a junction temperature limit of 150°C. The DC current transfer ratio (hFE) ranges from 50 to 250 at -4 V collector-to-emitter voltage and -0.5 A collector current. The transistor is not rated for medical, automotive, or safety-critical applications without explicit manufacturer authorization.