Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA672T-T2-A UPA672T-T2-A

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102461-UPA672T-T2-A Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 50 V Input Capacitance: 6 pF Power Dissipation: 200 mW Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 200 mW Continuous Drain Current (ID): 100 mA Drain to Source Breakdown Voltage: 50 V Drain to Source Resistance: 20 Ω Gate to Source Voltage (Vgs): 7 V Rds On Max: 20 Ω
Request a Quote
Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102461-UPA672T-T2-A Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 50 V Input Capacitance: 6 pF Power Dissipation: 200 mW Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 200 mW Continuous Drain Current (ID): 100 mA Drain to Source Breakdown Voltage: 50 V Drain to Source Resistance: 20 Ω Gate to Source Voltage (Vgs): 7 V Rds On Max: 20 Ω
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA672T-T2-A - 1102461-UPA672T-T2-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA672T-T2-A
1102461-UPA672T-T2-A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA672T-T2-A 1102461-UPA672T-T2-A
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1102461-UPA672T-T2-A Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 50 V Input Capacitance: 6 pF Power Dissipation: 200 mW Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 200 mW Continuous Drain Current (ID): 100 mA Drain to Source Breakdown Voltage: 50 V Drain to Source Resistance: 20 Ω Gate to Source Voltage (Vgs): 7 V Rds On Max: 20 Ω

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1102461-UPA672T-T2-A
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 50 V
Input Capacitance: 6 pF
Power Dissipation: 200 mW
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Mount: Surface Mount
RoHS: Compliant
Max Power Dissipation: 200 mW
Continuous Drain Current (ID): 100 mA
Drain to Source Breakdown Voltage: 50 V
Drain to Source Resistance: 20 Ω
Gate to Source Voltage (Vgs): 7 V
Rds On Max: 20 Ω

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102461-UPA672T-T2-A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA672T-T2-A
V(BR)DSS 50 volts
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1222847 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23
View Details
CSD17577Q5A CSD17577Q5A - CSD17577Q5A - Texas Instruments
Specs
V(BR)DSS 30 volts
IDSS 280000 milliamps
VGS(off) 20 volts
View Details
9 suppliers
60 V, 360 mA N-channel Trench MOSFET - 2N7002P,215 - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 360000 milliamps
View Details
8 suppliers