60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150
Power MOSFET 8-Pin SOIC T/R Product overview: CSD88537ND from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD88537ND can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
MOSFET 2N-CH 60V 15A 8SOIC
Manufacturer: Texas Instruments
Win Source Part Number: 1163558-CSD88537ND
Family Name: CSD88537ND
Manufacturer Homepage: www.ti.com
Alternative Parts (Cross-Reference): STS8DN6LF6AG; SH8K39TB; SH8K39GZETB;
Introduction Date: February 07, 2014
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Automation & Process Control, Motor Drive & Control, Robotics
MOSFET 2N-CH 60V 15A 8SOIC
MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; PowerRoHS Compliant: Yes
MOSFET 60-V Dual N-Channel Power MOSFET
60V 15A 2.1W 15mΩ@10V,8A 3.6V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD88537ND | 289-CSD88537ND | 296-37303-2-ND | CSD88537ND | 1163558-CSD88537ND | CSD88537ND | 28AH2113 | CSD88537ND | CSD88537ND |
| Product Name | CSD88537ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND | SOIC MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD88537ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 60V, 15A, Soic; Transistor Polarity Texas Instruments | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 62000 milliamps | 15000 milliamps | 15000 milliamps | ||||||
| QG | 14 nC | ||||||||
| Package Type | SO-8 | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3 | TO-3 |
