Rectron Semiconductor Inc. MOSFET RM4435-T

The RM4435 is a P-channel enhancement mode power MOSFET in an SOP-8 package, designed for battery switching, load switching, and power management applications. It has a drain-source voltage rating of -30 V and a continuous drain current of -9.1 A at 25 °C, with an on-state resistance of up to 35 mΩ at -4.5 V gate voltage and 20 mΩ at -10 V gate voltage. The device supports a maximum power dissipation of 3.1 W and operates within a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to ambient is 40 °C/W. The package is surface mount with a reel size of Ø330 mm and 12 mm tape width, containing 4000 units per reel. The device is lead-free and compliant with surface mount technology standards.