The LM5111-4M/NOPB is a dual 5A compound gate driver in an SOIC-8 package, designed to drive both N-channel and P-channel MOSFETs in synchronous switching applications. It features independent inverting and non-inverting outputs, with OUT_A held high during under-voltage lockout (UVLO) to safely turn off a P-channel MOSFET while OUT_B is disabled low. Each output can source 3A and sink 5A with a peak pulsed current capability, and has propagation delays of 25 ns typical and rise/fall times of 14 ns and 12 ns respectively with a 2 nF load. The device operates from a 3.5 V to 14 V supply and includes UVLO with hysteresis. It is pin-compatible with industry-standard gate drivers and meets AEC-Q100 qualification. The SOIC-8 package has a thermal resistance of 170°C/W junction-to-ambient under natural convection.
MOSFET Driver, BICMOS, PDSO8
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LM5111-4M/NOPB |
| Package Type | SOIC8 |