Rectron Semiconductor Inc. MOSFET RM150N40DF

The RM150N40DF is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a DFN5X6-8L case with a maximum drain-source voltage of 40 V and a continuous drain current of 150 A at 25°C. The device has a typical on-resistance of 1.72 mΩ at 10 V gate-source voltage and 2.3 mΩ at 4.5 V gate-source voltage. It operates at junction temperatures up to 150°C, supports 100% unclamped inductive switching (UIS) testing, and meets RoHS standards. The thermal resistance from junction to case is 1.42°C/W, and the maximum power dissipation is 88 W at 25°C.