Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1629-E 2SK1629-E

The 2SK1629-E is a silicon N-channel MOS FET designed for high-speed power switching in applications such as switching regulators and DC-DC converters. It comes in a TO-3PL package with dimensions of 20.0 ± 0.3 mm in length, 5.45 ± 0.5 mm in width, and 7.4 mm in height, weighing 9.9 g. The device has a drain-to-source voltage rating of 500 V, a continuous drain current of 30 A, and a peak drain current of 120 A under pulse conditions (PW ≤ 10 µs, duty cycle ≤ 1%). It features low on-resistance, high-speed switching, and no secondary breakdown. The maximum channel dissipation is 200 W at 25°C, with a channel temperature limit of 150°C and a storage temperature range of -55°C to +150°C. The gate-to-source voltage is rated at ±30 V. The part is shipped in a tube containing 250 units.