Qorvo DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT TGF2956

Description
Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications. Lead-free and RoHS compliant.
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Description
Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications. Lead-free and RoHS compliant.
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Suppliers

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DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT - TGF2956 - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
TGF2956
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT TGF2956
Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications. Lead-free and RoHS compliant.

Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz.

The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications.

Lead-free and RoHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2956
Product Name DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
Transistor Technology / Material GaN on SiC
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