Qorvo 2 - 20 GHz 10 Watt GaN Amplifier TGA2962

Description
Qorvo's TGA2962 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 Ω, including integrated DC blocking capacitors and a RF choke. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets. TGA2962 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant.
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Description
Qorvo's TGA2962 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 Ω, including integrated DC blocking capacitors and a RF choke. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets. TGA2962 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant.
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Suppliers

Company
Product
Description
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2 - 20 GHz 10 Watt GaN Amplifier - TGA2962 - Qorvo
Greensboro, NC, United States
2 - 20 GHz 10 Watt GaN Amplifier
TGA2962
2 - 20 GHz 10 Watt GaN Amplifier TGA2962
Qorvo's TGA2962 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 Ω, including integrated DC blocking capacitors and a RF choke. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets. TGA2962 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant.

Qorvo's TGA2962 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 Ω, including integrated DC blocking capacitors and a RF choke.
This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets.
TGA2962 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead free and RoHS compliant.

Supplier's Site Datasheet
RF Amplifiers - 2312-TGA2962-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-TGA2962-ND
RF Amplifiers 2312-TGA2962-ND
2-20 GHZ 10 W GAN AMP

2-20 GHZ 10 W GAN AMP

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Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number TGA2962 2312-TGA2962-ND
Product Name 2 - 20 GHz 10 Watt GaN Amplifier RF Amplifiers
Applications Military / Defense; Radar Systems; SATCOM Radar
RoHS Compliant RoHS
Frequency Range 2000 to 20000 MHz 2000 to 20000 MHz
Minimum Gain 20 dB 19.7 dB
Maximum Gain 20 dB 19.7 dB
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