Qorvo 9 - 10 GHz, 20 Watt GaN Power Amplifier TGA2624-SM

Description
Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain. The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain. The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

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9 - 10 GHz, 20 Watt GaN Power Amplifier - TGA2624-SM - Qorvo
Greensboro, NC, United States
9 - 10 GHz, 20 Watt GaN Power Amplifier
TGA2624-SM
9 - 10 GHz, 20 Watt GaN Power Amplifier TGA2624-SM
Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain. The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain.

The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.

Lead-free and RoHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Amplifiers
Product Number TGA2624-SM
Product Name 9 - 10 GHz, 20 Watt GaN Power Amplifier
Amplifier Type Power Amplifier
Applications Military / Defense; Radar Systems
RoHS Compliant RoHS
Frequency Range 9000 to 10000 MHz
Minimum Gain 34 dB
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