Qorvo DC - 5 GHz Cascadable InGaP / GaAs HBT MMIC Amplifier SBA5086Z

Description
Qorvo's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
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Description
Qorvo's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
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DC - 5 GHz Cascadable InGaP / GaAs HBT MMIC Amplifier - SBA5086Z - Qorvo
Greensboro, NC, United States
DC - 5 GHz Cascadable InGaP / GaAs HBT MMIC Amplifier
SBA5086Z
DC - 5 GHz Cascadable InGaP / GaAs HBT MMIC Amplifier SBA5086Z
Qorvo's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Qorvo's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Amplifiers
Product Number SBA5086Z
Product Name DC - 5 GHz Cascadable InGaP / GaAs HBT MMIC Amplifier
Frequency Range ? to 5000 MHz
Minimum Gain 17.2 dB
Maximum Gain 17.2 dB
Output Power 19.5 dBm
Noise Figure 4.4 dB
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