Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
DC-18GHZ,12W DISCRETE PWR GAN/SI
RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
| Qorvo | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors | Transistors |
| Product Number | TGF2023-2-02 | 2312-TGF2023-2-02-ND | TGF2023-2-02 | TGF2023-2-02 |
| Product Name | DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT | RF FETs, MOSFETs | Transistors | RF JFET Transistors |
| Transistor Technology / Material | GaN on SiC | |||
| Transistor Grade / Operating Range | Military | |||
| Package Type | Die | Die |
