PANJIT SemiConductor Single FETs, MOSFETs PJMF280N65E1_T0_00001

Description
N-Channel 650V 13.8A (Tc) 35.7W (Tc) Through Hole ITO-220AB-F
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Description
N-Channel 650V 13.8A (Tc) 35.7W (Tc) Through Hole ITO-220AB-F
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Datasheet
Datasheet Summary
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650V N-channel Super Junction MOSFET in ITO-220AB-F package with a continuous drain current of 13.8 A at 25°C and a maximum on-state resistance of 280 mΩ at 10V gate-source voltage. The device is avalanche tested, has a gate charge of 30 nC, and supports a peak drain current of 41.4 A. Thermal resistance from junction to case is 3.5°C/W, and junction-to-ambient is 62.5°C/W. Operating junction and storage temperature range is -55°C to 150°C. RoHS 2.0 compliant with green molding compound per IEC 61249. ITO-220AB-F package has 3.5 kV insulation withstand voltage.

Datasheet Summary
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650V N-channel Super Junction MOSFET in ITO-220AB-F package with a continuous drain current of 13.8 A at 25°C and a maximum on-state resistance of 280 mΩ at 10V gate-source voltage. The device is avalanche tested, has a gate charge of 30 nC, and supports a peak drain current of 41.4 A. Thermal resistance from junction to case is 3.5°C/W, and junction-to-ambient is 62.5°C/W. Operating junction and storage temperature range is -55°C to 150°C. RoHS 2.0 compliant with green molding compound per IEC 61249. ITO-220AB-F package has 3.5 kV insulation withstand voltage.

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Single FETs, MOSFETs - 3757-PJMF280N65E1_T0_00001-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3757-PJMF280N65E1_T0_00001-ND
Single FETs, MOSFETs 3757-PJMF280N65E1_T0_00001-ND
N-Channel 650V 13.8A (Tc) 35.7W (Tc) Through Hole ITO-220AB-F

N-Channel 650V 13.8A (Tc) 35.7W (Tc) Through Hole ITO-220AB-F

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 3757-PJMF280N65E1_T0_00001-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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