CSD25304W1015T is a 20-V P-channel NexFET power MOSFET in a 1.0 × 1.5 mm DSBGA package with a 0.62 mm profile. It has a gate-to-source threshold voltage of -0.8 V, a drain-to-source on-resistance of 27 mΩ at -4.5 V gate drive, and a total gate charge of 3.3 nC. The device supports a continuous drain current of -3.0 A and a pulsed drain current of -41 A, with a maximum power dissipation of 0.75 W and an operating junction temperature range of -55°C to 150°C. It is Pb-free, RoHS compliant, and halogen-free.
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA
P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.5, 32.5mOhm 6-DSBGA -55 to 150 Product overview: CSD25304W1015T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 32.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 32.5mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD25304W1015T can be used for catalog matching and distributor lookup.
Win Source Part Number: 1355962-CSD25304W101
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 37 pct.
MSL Level: 1 (Unlimited)
Mfr: Texas Instruments
Series: NexFET™
Package: Tape & Reel
Product Status: Active
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)
Base Product Number: CSD25304W1015
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
Power Dissipation (Max): 750mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET P-CH 20V 3A 6DSBGA
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD25304W1015T | 296-38024-2-ND | 278-CSD25304W1015T | 1355962-CSD25304W1015T | CSD25304W1015T | CSD25304W1015T |
| Product Name | CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | -20V 32.5mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | -20 volts | |||||
| rDS(on) | 0.0325 ohms | |||||
| QG | 3.3 nC |
