N-Channel Silicon MOSFET designed for general-purpose switching applications, housed in the MCPH3 package with dimensions of 2.0 mm x 1.2 mm x 0.65 mm. It features a 60 V drain-to-source voltage rating, continuous drain current of 200 mA, and maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device supports 1.5 V gate drive and has a typical on-state resistance of 2.9 Ω at 4 V gate-source voltage. It meets an absolute maximum channel temperature of 150 °C and storage temperature range of −55 °C to +150 °C.
N-Channel Silicon MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6LN04CH-TL-E |
| Polarity | N-Channel |