Panasonic 6LN04CH-TL-E

Description
N-Channel Silicon MOSFET
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Description
N-Channel Silicon MOSFET
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET designed for general-purpose switching applications, housed in the MCPH3 package with dimensions of 2.0 mm x 1.2 mm x 0.65 mm. It features a 60 V drain-to-source voltage rating, continuous drain current of 200 mA, and maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device supports 1.5 V gate drive and has a typical on-state resistance of 2.9 Ω at 4 V gate-source voltage. It meets an absolute maximum channel temperature of 150 °C and storage temperature range of −55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

N-Channel Silicon MOSFET designed for general-purpose switching applications, housed in the MCPH3 package with dimensions of 2.0 mm x 1.2 mm x 0.65 mm. It features a 60 V drain-to-source voltage rating, continuous drain current of 200 mA, and maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device supports 1.5 V gate drive and has a typical on-state resistance of 2.9 Ω at 4 V gate-source voltage. It meets an absolute maximum channel temperature of 150 °C and storage temperature range of −55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 6LN04CH-TL-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET

N-Channel Silicon MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 6LN04CH-TL-E
Polarity N-Channel
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