Texas Instruments CSD23382F4 P-Channel NexFET Power MOSFET CSD23382F4T

Description
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0
Request a Quote Datasheet
Description
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0
Request a Quote Datasheet

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Product
Description
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CSD23382F4 P-Channel NexFET Power MOSFET - CSD23382F4T - Texas Instruments
Dallas, TX, United States
CSD23382F4 P-Channel NexFET Power MOSFET
CSD23382F4T
CSD23382F4 P-Channel NexFET Power MOSFET CSD23382F4T
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0

P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4T - 1030669-CSD23382F4T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4T
1030669-CSD23382F4T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4T 1030669-CSD23382F4T
Manufacturer: Texas Instruments Win Source Part Number: 1030669-CSD23382F4T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-PICOSTAR Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 1.35nC @ 4.5V Max Input Capacitance: 235pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 76 mOhm @ 500mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 1030669-CSD23382F4T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-PICOSTAR
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 1.35nC @ 4.5V
Max Input Capacitance: 235pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 76 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 296-37874-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37874-1-ND
Single FETs, MOSFETs 296-37874-1-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
Single FETs, MOSFETs - 296-37874-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37874-2-ND
Single FETs, MOSFETs 296-37874-2-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
Single FETs, MOSFETs - 296-37874-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37874-6-ND
Single FETs, MOSFETs 296-37874-6-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
 - CSD23382F4T - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, -3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, -3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
MOSFET P-CH 12V 3.5A 3PICOSTAR - 815-CSD23382F4T - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 3.5A 3PICOSTAR
815-CSD23382F4T
MOSFET P-CH 12V 3.5A 3PICOSTAR 815-CSD23382F4T
MOSFET P-CH 12V 3.5A 3PICOSTAR

MOSFET P-CH 12V 3.5A 3PICOSTAR

Supplier's Site
Mosfet, P-Channel, -12V, -3.5A, Lga-3; Transistor Polarity Texas Instruments - 26AJ5583 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Channel, -12V, -3.5A, Lga-3; Transistor Polarity Texas Instruments
26AJ5583
Mosfet, P-Channel, -12V, -3.5A, Lga-3; Transistor Polarity Texas Instruments 26AJ5583
MOSFET, P-CHANNEL, -12V, -3.5A, LGA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-800mV; RoHS Compliant: Yes

MOSFET, P-CHANNEL, -12V, -3.5A, LGA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-800mV; RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Ch NexFET Power MOSFET

MOSFET P-Ch NexFET Power MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD23382F4T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD23382F4T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD23382F4T
MOSFET P-CH 12V 3.5A 3PICOSTAR

MOSFET P-CH 12V 3.5A 3PICOSTAR

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics DigiKey Rochester Electronics Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD23382F4T 1030669-CSD23382F4T 296-37874-1-ND CSD23382F4T 815-CSD23382F4T 26AJ5583 CSD23382F4T CSD23382F4T
Product Name CSD23382F4 P-Channel NexFET Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4T Single FETs, MOSFETs MOSFET P-CH 12V 3.5A 3PICOSTAR Mosfet, P-Channel, -12V, -3.5A, Lga-3; Transistor Polarity Texas Instruments MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS -12 volts 12 volts
rDS(on) 0.0760 ohms 0.0660 ohms
IDSS -22000 milliamps -3500 milliamps
QG 1.04 nC
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