ODG (Origin Data Global) Transistors GX817B-S

Description
35V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators ROHS
  • Transistors - GX817B-S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
35V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - GX817B-S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
GX817B-S
Transistors GX817B-S
35V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators ROHS

35V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number GX817B-S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 444028 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2MBI100NB-120
Specs
Transistor Type IGBT
View Details
45 V, 500 mA PNP general-purpose transistors - BC807-40QB-QZ - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA PNP general-purpose transistors
BC807-40QB-QZ
Specs
Transistor Type BJT
Package Type SOT8015 SOT8015
View Details
5 suppliers
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6796 - 2N6796 - Infineon Technologies AG
Infineon Technologies AG
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6796
2N6796
Specs
Transistor Type MOSFET; Power-MOSFET
Polarity N-Channel; N
Package Type M-TO205-3
View Details
3 suppliers
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E590
Specs
Transistor Type IGBT
View Details