Fuji Electric Corp. of America Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric 6MBI50S-120-50

Description
IGBT MODULE, 2.6V, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.65V; Power Dissipation:360W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
Description
IGBT MODULE, 2.6V, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.65V; Power Dissipation:360W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The 6MBI50S-120-50 is a six-phase IGBT module designed for high-power switching applications, featuring a 1200 V collector-emitter voltage rating and continuous collector current of 75 A at 25 ℃. It is mounted via M5 screws with a recommended torque of 2.5 to 3.5 N·m and houses seven-terminal connections for three-phase bridge configuration. The module has a maximum junction temperature of 150 ℃ and thermal resistance of 0.35 ℃/W per IGBT and 0.75 ℃/W per internal freewheeling diode. Collector-emitter saturation voltage is specified up to 2.65 V at 50 A and 25 ℃. Isolation voltage is 2500 V AC for one minute, and the package is constructed with PPS resin meeting UL 94 V-0 flammability rating. The part is RoHS compliant and tested to EIAJ ED-4701 reliability standards.

Datasheet Summary
Powered by GS/AI

The 6MBI50S-120-50 is a six-phase IGBT module designed for high-power switching applications, featuring a 1200 V collector-emitter voltage rating and continuous collector current of 75 A at 25 ℃. It is mounted via M5 screws with a recommended torque of 2.5 to 3.5 N·m and houses seven-terminal connections for three-phase bridge configuration. The module has a maximum junction temperature of 150 ℃ and thermal resistance of 0.35 ℃/W per IGBT and 0.75 ℃/W per internal freewheeling diode. Collector-emitter saturation voltage is specified up to 2.65 V at 50 A and 25 ℃. Isolation voltage is 2500 V AC for one minute, and the package is constructed with PPS resin meeting UL 94 V-0 flammability rating. The part is RoHS compliant and tested to EIAJ ED-4701 reliability standards.

Suppliers

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Product
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Supplier Links
Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric - 56P5499 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric
56P5499
Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric 56P5499
IGBT MODULE, 2.6V, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.65V; Power Dissipation:360W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 2.6V, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.65V; Power Dissipation:360W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 56P5499
Product Name Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric
PD 360000 milliwatts
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