The 6MBI50S-120-50 is a six-phase IGBT module designed for high-power switching applications, featuring a 1200 V collector-emitter voltage rating and continuous collector current of 75 A at 25 ℃. It is mounted via M5 screws with a recommended torque of 2.5 to 3.5 N·m and houses seven-terminal connections for three-phase bridge configuration. The module has a maximum junction temperature of 150 ℃ and thermal resistance of 0.35 ℃/W per IGBT and 0.75 ℃/W per internal freewheeling diode. Collector-emitter saturation voltage is specified up to 2.65 V at 50 A and 25 ℃. Isolation voltage is 2500 V AC for one minute, and the package is constructed with PPS resin meeting UL 94 V-0 flammability rating. The part is RoHS compliant and tested to EIAJ ED-4701 reliability standards.
IGBT MODULE, 2.6V, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.65V; Power Dissipation:360W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 56P5499 |
| Product Name | Igbt Module, 2.6V, 75A; Continuous Collector Current Fuji Electric |
| PD | 360000 milliwatts |