ODG (Origin Data Global) Transistors ASDM40N52E-R

Description
40V 52A 6.5mΩ@10V,20A 65W 1.6V@250uA 1 N-Channel DFN-8(3x3.1) MOSFETs ROHS
Description
40V 52A 6.5mΩ@10V,20A 65W 1.6V@250uA 1 N-Channel DFN-8(3x3.1) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - ASDM40N52E-R - ODG (Origin Data Global)
Shenzhen, China
Transistors
ASDM40N52E-R
Transistors ASDM40N52E-R
40V 52A 6.5mΩ@10V,20A 65W 1.6V@250uA 1 N-Channel DFN-8(3x3.1) MOSFETs ROHS

40V 52A 6.5mΩ@10V,20A 65W 1.6V@250uA 1 N-Channel DFN-8(3x3.1) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ASDM40N52E-R
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Hard To Find - 1MBI900V-120-50 - 1121632-1MBI900V-120-50 - Win Source Electronics
Specs
Transistor Type IGBT
Package Type SOT3
View Details
2 suppliers
Bipolar Transistor, Npn, 45V, 500Ma, 3-Sot-23, Full Reel; Transistor Polarity Nexperia - 27AC0840 - Newark, An Avnet Company
Specs
Transistor Type Bipolar RF; Bipolar Transistor, Npn, 45V, 500Ma, 3-Sot-23, Full Reel; Transistor Polarity Nexperia
Polarity NPN
Package Type TO-3; SOT23
View Details
Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details