onsemi Single FETs, MOSFETs S2N7002ET1G

The S2N7002ET1G is a 60 V, 310 mA, single N-channel MOSFET in a SOT-23 package measuring 2.90 × 1.30 × 1.00 mm, designed for low-side load switching, level shift circuits, and portable applications. It features trench technology, a maximum on-resistance of 3.0 Ω at 4.5 V gate drive, and is AEC-Q101 qualified and RoHS compliant with Pb-free, halogen-free construction. The device has a junction temperature range of -55 to +150 °C, a maximum power dissipation of 300 mW, and a thermal resistance of 417 °C/W.