Qorvo 3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor QPD3601

Description
Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD3601 can deliver PSAT of 180 W at 50 V operation. Lead-free and ROHS compliant.
  • 3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor - QPD3601 - Qorvo
    Qorvo
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Description
Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD3601 can deliver PSAT of 180 W at 50 V operation. Lead-free and ROHS compliant.
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3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor - QPD3601 - Qorvo
Qorvo
Greensboro, NC, United States
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
QPD3601
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor QPD3601
Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD3601 can deliver PSAT of 180 W at 50 V operation. Lead-free and ROHS compliant.

Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor.

The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD3601 can deliver PSAT of 180 W at 50 V operation.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD3601
Product Name 3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
Transistor Technology / Material GaN
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