NVMFS5C673NLAFT1G-YE is a single N-channel power MOSFET in a DFN5 (SO-8FL) package measuring 5 mm by 6 mm, designed for high-efficiency switching applications. It features a drain-to-source voltage rating of 60 V, a continuous drain current of 14 A at 25°C ambient, and a maximum on-resistance of 9.2 mΩ at 10 V gate drive. The device is AEC-Q101 qualified and RoHS compliant, with a junction and storage temperature range of -55°C to +175°C. Thermal resistance is 3.2°C/W junction-to-case and 42°C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 board.
Datasheet Summary Powered by GS/AI
NVMFS5C673NLAFT1G-YE is a single N-channel power MOSFET in a DFN5 (SO-8FL) package measuring 5 mm by 6 mm, designed for high-efficiency switching applications. It features a drain-to-source voltage rating of 60 V, a continuous drain current of 14 A at 25°C ambient, and a maximum on-resistance of 9.2 mΩ at 10 V gate drive. The device is AEC-Q101 qualified and RoHS compliant, with a junction and storage temperature range of -55°C to +175°C. Thermal resistance is 3.2°C/W junction-to-case and 42°C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 board.
