Qorvo Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs UJ4C075018K4S

The UJ4C075018K4S is a 750 V, 18 mO SiC FET designed for high-performance applications. It utilizes a cascode configuration that combines a normally-on SiC JFET with a Si MOSFET, resulting in a normally-off device. This configuration allows for compatibility with standard gate drivers, facilitating easy integration into existing designs that use Si IGBTs, Si superjunction devices, or SiC MOSFETs.

Key specifications include a maximum continuous drain current of 81 A, a maximum pulsed drain current of 205 A, and a maximum power dissipation of 385 W. The device operates effectively at temperatures up to 175°C and features low gate charge (37.8 nC) and excellent reverse recovery characteristics (Qrr = 102 nC). The TO-247-4L package enhances thermal performance and switching speed, making it suitable for applications such as switch mode power supplies, PV inverters, EV charging, and motor drives.

Engineers considering this product should note its low on-resistance and intrinsic capacitance, which contribute to reduced conduction and switching losses, making it a viable option for demanding power applications.