onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NVMFS5C612NLT1G

Description
Win Source Part Number: 962379-NVMFS5C612NLT 1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 1,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRFS7530TRL7PP; FDMS86550ET60; NTMFS5C612NLT1G; NTMFS5C612NLT3G; IRFS3206PBF; IRFS7537TRLPBF; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: NVMFS5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 962379-NVMFS5C612NLT 1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 1,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRFS7530TRL7PP; FDMS86550ET60; NTMFS5C612NLT1G; NTMFS5C612NLT3G; IRFS3206PBF; IRFS7537TRLPBF; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: NVMFS5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

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Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 962379-NVMFS5C612NLT1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
962379-NVMFS5C612NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 962379-NVMFS5C612NLT1G
Win Source Part Number: 962379-NVMFS5C612NLT 1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 1,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRFS7530TRL7PP; FDMS86550ET60; NTMFS5C612NLT1G; NTMFS5C612NLT3G; IRFS3206PBF; IRFS7537TRLPBF; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: NVMFS5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 962379-NVMFS5C612NLT1G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IRFS7530TRL7PP; FDMS86550ET60; NTMFS5C612NLT1G; NTMFS5C612NLT3G; IRFS3206PBF; IRFS7537TRLPBF;
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NVMFS5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
N-Channel 60V 235A MOSFET Transistor
278-NVMFS5C612NLT1G
N-Channel 60V 235A MOSFET Transistor 278-NVMFS5C612NLT1G
Single N-Channel Power MOSFET 60V, 235A, 1.5mΩ 1500 / Tape & Reel, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL Product overview: NVMFS5C612NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 235A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 235A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5C612NLT1G can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 60V, 235A, 1.5mΩ 1500 / Tape & Reel, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL Product overview: NVMFS5C612NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 235A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 235A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5C612NLT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NVMFS5C612NLT1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVMFS5C612NLT1G
Single FETs, MOSFETs NVMFS5C612NLT1G
MOSFET N-CH 60V 36A/235A 5DFN

MOSFET N-CH 60V 36A/235A 5DFN

Supplier's Site Datasheet
Single FETs, MOSFETs - 488-NVMFS5C612NLT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NVMFS5C612NLT1GTR-ND
Single FETs, MOSFETs 488-NVMFS5C612NLT1GTR-ND
N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NVMFS5C612NLT1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NVMFS5C612NLT1GCT-ND
Single FETs, MOSFETs 488-NVMFS5C612NLT1GCT-ND
MOSFET N-CH 60V 36A/235A 5DFN

MOSFET N-CH 60V 36A/235A 5DFN

Buy Now Datasheet
Single FETs, MOSFETs - 488-NVMFS5C612NLT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NVMFS5C612NLT1GDKR-ND
Single FETs, MOSFETs 488-NVMFS5C612NLT1GDKR-ND
MOSFET N-CH 60V 36A/235A 5DFN

MOSFET N-CH 60V 36A/235A 5DFN

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NFET SO8FL 60V 235A 1.5MO

MOSFET NFET SO8FL 60V 235A 1.5MO

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 60V, 250A, Dfn; Transistor Polarity Onsemi - 07AH4429 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, 250A, Dfn; Transistor Polarity Onsemi
07AH4429
Mosfet, Aec-Q101, N-Ch, 60V, 250A, Dfn; Transistor Polarity Onsemi 07AH4429
MOSFET, AEC-Q101, N-CH, 60V, 250A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:250A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, 250A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:250A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFS5C612NLT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVMFS5C612NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFS5C612NLT1G
MOSFET N-CH 60V 36A/235A 5DFN

MOSFET N-CH 60V 36A/235A 5DFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 962379-NVMFS5C612NLT1G 278-NVMFS5C612NLT1G NVMFS5C612NLT1G 488-NVMFS5C612NLT1GTR-ND NVMFS5C612NLT1G 07AH4429 NVMFS5C612NLT1G
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 60V 235A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, Aec-Q101, N-Ch, 60V, 250A, Dfn; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
PD 3800 to 167000 milliwatts 167000 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads TO-3 91 nC @ 10 V
Transistor Technology / Material MOSFET (Metal Oxide)
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