onsemi Single FETs, MOSFETs NTD4858NAT4G

Description
N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Surface Mount DPAK
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Description
N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Surface Mount DPAK
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - NTD4858NAT4G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4858NAT4G-ND
Single FETs, MOSFETs NTD4858NAT4G-ND
N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Surface Mount DPAK

N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4858NAT4G - 060616-NTD4858NAT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4858NAT4G
060616-NTD4858NAT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4858NAT4G 060616-NTD4858NAT4G
Manufacturer: ON Semiconductor Win Source Part Number: 060616-NTD4858NAT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 11.2A (Ta), 73A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 19.2nC @ 4.5V Max Input Capacitance: 1563pF @ 12V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060616-NTD4858NAT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 11.2A (Ta), 73A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 19.2nC @ 4.5V
Max Input Capacitance: 1563pF @ 12V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4858NAT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4858NAT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4858NAT4G
MOSFET N-CH 25V 11.2A/73A DPAK

MOSFET N-CH 25V 11.2A/73A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD4858NAT4G-ND 060616-NTD4858NAT4G NTD4858NAT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4858NAT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 25 volts
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