Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA2201-TD-E 2SA2201-TD-E

The 2SA2201 is a PNP epitaxial planar silicon transistor designed for high-voltage switching applications such as DC/DC converters, relay drivers, and motor drivers. It is packaged in a TO-220 case with dimensions of 10.4 mm in length, 4.5 mm in width, and 4.5 mm in height, as shown in the package drawing. The device has a collector-to-emitter voltage rating of 80 V, a collector current of 2.5 A, and a collector dissipation of 3.5 W at Tc=25°C. It features a low collector-to-emitter saturation voltage of 90 to 180 mV at IC=1 A and IB=100 mA, and a DC current gain (hFE) of 200 to 400 at IC=100 mA. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C. It qualifies for AEC-Q200 automotive reliability standards.