onsemi Bipolar Transistor Arrays, Pre-Biased NSVBC143JPDXV6T1G

The NSVBC143JPDXV6T1G is a dual complementary bias resistor transistor in a SOT-563 package measuring 1.60 mm × 1.20 mm × 0.55 mm, integrating an NPN and PNP transistor with monolithic bias networks. It features a collector-emitter voltage rating of 50 V, a continuous collector current of 100 mA, and total device dissipation of 357 mW with one junction heated or 500 mW with both heated. The device is AEC-Q101 qualified, PPAP capable, and RoHS compliant. Input resistors are rated at 2.2 kΩ for the PNP and 47 kΩ for the NPN, with a resistor ratio of 0.047 and 1.0 respectively. Junction and storage temperature range is -55°C to +150°C.