Qorvo DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor T2G6001528-SG

Description
Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet
Description
Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor - T2G6001528-SG - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor
T2G6001528-SG
DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor T2G6001528-SG
Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-T2G6001528-SG-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-T2G6001528-SG-ND
RF FETs, MOSFETs 2312-T2G6001528-SG-ND
DC-6 GHZ, 15W, 28V GAN RF PWR TR

DC-6 GHZ, 15W, 28V GAN RF PWR TR

Buy Now Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
T2G6001528-SG
RF JFET Transistors T2G6001528-SG
RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN

Buy Now Datasheet

Technical Specifications

  Qorvo DigiKey VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors
Product Number T2G6001528-SG 2312-T2G6001528-SG-ND T2G6001528-SG
Product Name DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor RF FETs, MOSFETs RF JFET Transistors
Transistor Technology / Material DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-200 SOT-538A
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - UJ3C120080K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
4 suppliers
1200V 18.4A MOSFET Transistor - 278-UJ3C120150K3S - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
PD 167 milliwatts
View Details
5 suppliers
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor - T2G6000528-Q3 - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-200
View Details
4 suppliers