The T2G6001528-SG is a 15 W GaN on SiC HEMT RF power transistor operating from DC to 6 GHz, designed for high-power amplification in radar, communications, and test instrumentation. It is housed in a flangeless package with a thermal resistance of 6.7 °C/W and operates at a drain voltage of 28 V with a typical quiescent drain current of 100 mA. The device achieves 17 W output power at 3.3 GHz with 15.5 dB linear gain and 72% drain efficiency under pulsed conditions. It meets RoHS standards and is lead-free. The maximum channel temperature is 225 °C, and it supports pulse operation with 100 µs width and 20% duty cycle.
RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | T2G6001528-SG |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
