Nexperia B.V. 60 V, N-channel Trench MOSFET BSS138AK-QR

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. The device has a drain-source voltage rating of 60 V, a gate-source voltage range of ±20 V, and a continuous drain current of 250 mA at 25 °C. It features logic-level compatibility, electrostatic discharge protection, and is AEC-Q101 qualified with an extended junction temperature range up to 175 °C. Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.