MJD50G is an NPN silicon power transistor in a DPAK (369C) surface-mount package, rated for a collector-emitter voltage of 400 V and a continuous collector current of 1 A. It dissipates up to 1.56 W at 25°C ambient temperature, with derating of 0.0125 W/°C. The device has a minimum DC current gain of 30 at 0.3 A and 10 at 1 A collector current, with a collector-emitter saturation voltage of 1 V at 1 A and 0.2 A base current. It meets UL 94 V-0 flammability standards and is RoHS compliant. The transistor is suitable for switching applications and has a transition frequency of 10 MHz. It is electrically similar to the TIP50 and supports automotive applications through its NJV variant, though MJD50G itself is not explicitly marked as AEC-Q101 qualified.
Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:10MHz; DC Current Gain hFE Min:30hFE RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 27AC8966 |
| Product Name | Transistor Polarity Onsemi |
| Transistor Type | Transistor Polarity Onsemi |
