onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM IRFW630BTM

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069617-IRFW630BTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 720pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited