POWER FIELD-EFFECT TRANSISTOR, 2 Product overview: HUFA75307T3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUFA75307T3ST can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 2.6A, 55V, 0.09ohm, N-Channel, MOSFET
Power Field-Effect Transistor, 2.6A, 55V, 0.09ohm, N-Channel, MOSFET
N-Channel 55V 2.6A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 133464-HUFA75307T3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 20V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 4k pcs
MOSFET 15a 55V N-Channel UltraFET
MOSFET N-CH 55V 2.6A SOT223-4
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-HUFA75307T3ST | HUFA75307T3ST | HUFA75307T3STTR-ND | 133464-HUFA75307T3ST | HUFA75307T3ST | HUFA75307T3ST |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75307T3ST | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| PD | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Bulk | SOT223; SOT-223 | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223-4 | TO-261-4, TO-261AA | |
| Packing Method | Bulk | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
