30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 013360-CSD17301Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.55V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 3480pF @ 15V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 25A, 8V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 28A/100A 8VSON
Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
MOSFET 30V N Channel NexFET Pwr MOSFET
MOSFET N-CH 30V 28A/100A 8VSON
| Texas Instruments | Win Source Electronics | ODG (Origin Data Global) | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17301Q5A | 013360-CSD17301Q5A | CSD17301Q5A | CSD17301Q5A | 296-25795-6-ND | CSD17301Q5A | CSD17301Q5A |
| Product Name | CSD17301Q5A 30V N Channel NexFET? Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17301Q5A | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| rDS(on) | 0.0030 ohms | 0.0037 ohms | |||||
| IDSS | 181000 milliamps | 28000 milliamps | |||||
| QG | 19 nC |
