onsemi HUF75545P3_R4932

N-Channel UltraFET Power MOSFET in a TO-220AB package, rated for 80 V drain-to-source voltage and 75 A continuous drain current at 25°C case temperature, with a maximum on-resistance of 0.010 Ω at 10 V gate-source voltage. The device features a thermal resistance junction-to-case of 0.55°C/W and operates over a temperature range of -55°C to 175°C. It includes temperature-compensated PSPICE and SABER simulation models.