onsemi HUF75309D3ST_NL

N-Channel Power MOSFET with 19A continuous drain current, 55V drain-to-source voltage, and 0.070 Ω maximum on-resistance at 10V gate drive, housed in a TO-252AA (DPAK) package. The device supports a junction temperature range of -55°C to 175°C, with a thermal resistance junction-to-ambient of 100 °C/W. It meets UL 94 V-0 flammability requirements and is manufactured under ISO9000 and QS9000 quality systems. The part is rated for unclamped inductive switching and features low reverse recovery time and stored charge.