onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N90C_F109 FQA8N90C_F109

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141650-FQA8N90C_F109 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited