The FDI33N25 is an N-channel MOSFET designed for high-efficiency switched-mode power supplies and active power factor correction. It is packaged in the I2-PAK (TO-262AA) case, with a maximum drain-source voltage of 250 V and a continuous drain current of 33 A at 25°C. The device has a typical on-state resistance of 0.094 Ω at 10 V gate-source voltage and a total gate charge of 36.8 nC. It supports avalanche energy up to 918 mJ and has a peak diode recovery dv/dt capability of 4.5 V/ns. The operating and storage junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 0.53 °C/W. The part is 100% avalanche tested and meets RoHS standards. It is available in tube packing with a quantity of 50 per tube.
Win Source Part Number: 1023950-FDI33N25TU
Category: Discrete Semiconductor Products>Transistors
Series: UniFET™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 235W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: FAIFSCFDI33N25TU,215
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1023950-FDI33N25TU |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
