onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 8N60C 8N60C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 167558-8N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.26A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.13A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 167558-8N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.26A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.13A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 8N60C - 167558-8N60C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 8N60C
167558-8N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 8N60C 167558-8N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 167558-8N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.26A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.13A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 167558-8N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.26A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1255pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 167558-8N60C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 8N60C
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 48000 milliwatts
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