N-Channel Silicon MOSFET in the MCPH3 package, designed for general-purpose switching with 1.5V drive compatibility. It has a drain-to-source voltage rating of 60 V, a continuous drain current of 200 mA, and a maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device features a channel temperature rating of 150 °C and a storage temperature range of −55 °C to +150 °C. Electrical characteristics include a typical RDS(on) of 2.2 Ω at VGS=4 V and 100 mA, and a total gate charge of 1.0 nC at VGS=4 V. The part meets RoHS standards and is suitable for low-voltage switching applications.
N-Channel Silicon MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6LN04CH-TL-E |
| Polarity | N-Channel |