onsemi 6LN04CH-TL-E

Description
N-Channel Silicon MOSFET
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Description
N-Channel Silicon MOSFET
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET in the MCPH3 package, designed for general-purpose switching with 1.5V drive compatibility. It has a drain-to-source voltage rating of 60 V, a continuous drain current of 200 mA, and a maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device features a channel temperature rating of 150 °C and a storage temperature range of −55 °C to +150 °C. Electrical characteristics include a typical RDS(on) of 2.2 Ω at VGS=4 V and 100 mA, and a total gate charge of 1.0 nC at VGS=4 V. The part meets RoHS standards and is suitable for low-voltage switching applications.

Datasheet Summary
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N-Channel Silicon MOSFET in the MCPH3 package, designed for general-purpose switching with 1.5V drive compatibility. It has a drain-to-source voltage rating of 60 V, a continuous drain current of 200 mA, and a maximum power dissipation of 0.6 W when mounted on a ceramic board (900 mm² × 0.8 mm). The device features a channel temperature rating of 150 °C and a storage temperature range of −55 °C to +150 °C. Electrical characteristics include a typical RDS(on) of 2.2 Ω at VGS=4 V and 100 mA, and a total gate charge of 1.0 nC at VGS=4 V. The part meets RoHS standards and is suitable for low-voltage switching applications.

Suppliers

Company
Product
Description
Supplier Links
 - 6LN04CH-TL-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET

N-Channel Silicon MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 6LN04CH-TL-E
Polarity N-Channel
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