onsemi Discrete Semiconductor Products 2SA1669-TB-E

Description
Manufacturer: SANYO Semiconductor (U.S.A) Corporation Win Source Part Number: 101778-2SA1669-TB-E Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - RF Packaging: Reel(TR) Mounting Style: SMD/SMT Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: 3-CP Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 50mA Gain: 5dB Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): 2dB @ 900MHz Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: SANYO Semiconductor (U.S.A) Corporation Win Source Part Number: 101778-2SA1669-TB-E Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - RF Packaging: Reel(TR) Mounting Style: SMD/SMT Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: 3-CP Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 50mA Gain: 5dB Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): 2dB @ 900MHz Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 101778-2SA1669-TB-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
101778-2SA1669-TB-E
Discrete Semiconductor Products 101778-2SA1669-TB-E
Manufacturer: SANYO Semiconductor (U.S.A) Corporation Win Source Part Number: 101778-2SA1669-TB-E Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - RF Packaging: Reel(TR) Mounting Style: SMD/SMT Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: 3-CP Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 50mA Gain: 5dB Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): 2dB @ 900MHz Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Win Source Part Number: 101778-2SA1669-TB-E
Category: Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - RF
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Package: TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package: 3-CP
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 50mA
Gain: 5dB
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): 2dB @ 900MHz
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 101778-2SA1669-TB-E
Product Name Discrete Semiconductor Products
Polarity PNP
Unlock Full Specs
to access all available technical data

Similar Products

RF FETs, MOSFETs - 2312-QPD0020TR7TR-ND - DigiKey
Specs
Package Type 20-VFQFN Exposed Pad
View Details
2 suppliers
730A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D730 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Bipolar Transistors - 155204 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT223; Sot-223
View Details