NPN/PNP resistor-equipped double transistor with built-in 10 kΩ bias resistors, rated for 50 V collector-emitter voltage and 100 mA output current, housed in a TSSOP6 (SOT363-3) surface-mount package. The device integrates two transistors with complementary polarity and is designed for digital switching applications, reducing component count and assembly costs.
NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PUMH11
PNP/PNP complement: PUMB11
Features and benefits
Applications
PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin Product overview: PUMD3,165 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TSSOP. Search-friendly keywords include transistor, BJT, switching, amplification, TSSOP, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PUMD3,165 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090715-PUMD3,165
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
TRANS PREBIAS 1NPN 1PNP 6TSSOP
RF TRANSISTOR ROHS COMPLIANT: YES
TRANS PREBIAS 1NPN 1PNP 6TSSOP
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | PUMD3,165 | 293-PUMD3,165 | 1090715-PUMD3,165 | 1727-1984-6-ND | PUMD3,165 | 29AK4235 | PUMD3,165 |
| Product Name | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ | TSSOP Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMD3,165 | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor Rohs Compliant Nexperia | Bipolar Transistor Arrays, Pre-Biased |
| Package Type | SOT363-3 SOT363-3 | SOT3; 6-TSSOP | 6-TSSOP, SC-88, SOT-363 | TO-3 | 6-TSSOP, SC-88, SOT-363 | ||
| Transistor Grade / Operating Range | Industrial; Automotive | ||||||
| Polarity | NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) | NPN; PNP | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP | ||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
