Nexperia B.V. 60 V, 1 A PNP medium power transistors BC52-16PA,115

Description
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
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Description
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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PNP medium power transistors in an ultra thin SOT1061 leadless SMD plastic package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heatsink for improved thermal and electrical performance. The BC52-16PA variant offers a DC current gain range of 100 to 250 at VCE = -2 V and IC = -150 mA, with a maximum collector current of 1 A and collector-emitter voltage of -60 V. It supports peak collector current up to 2 A for pulses ≤ 1 ms and has a total power dissipation of up to 1.10 W with a 6 cm² collector pad on a single-sided FR4 PCB. Junction temperature ranges from -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

PNP medium power transistors in an ultra thin SOT1061 leadless SMD plastic package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heatsink for improved thermal and electrical performance. The BC52-16PA variant offers a DC current gain range of 100 to 250 at VCE = -2 V and IC = -150 mA, with a maximum collector current of 1 A and collector-emitter voltage of -60 V. It supports peak collector current up to 2 A for pulses ≤ 1 ms and has a total power dissipation of up to 1.10 W with a 6 cm² collector pad on a single-sided FR4 PCB. Junction temperature ranges from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP medium power transistors - BC52-16PA,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP medium power transistors
BC52-16PA,115
60 V, 1 A PNP medium power transistors BC52-16PA,115
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers

PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • Leadless very small SMD plastic package with medium power capability

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
Supplier's Site Datasheet
Singapore, Singapore
60V 1A 1650mW Bipolar Transistor
276-BC52-16PA,115
60V 1A 1650mW Bipolar Transistor 276-BC52-16PA,115
PNP BJT Transistor, 60V, 1A, 1650mW, SMT, 3-Pin HUSON Product overview: BC52-16PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1A, 1650mW. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1A, 1650mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC52-16PA,115 can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 60V, 1A, 1650mW, SMT, 3-Pin HUSON Product overview: BC52-16PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1A, 1650mW. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1A, 1650mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC52-16PA,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-1253-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-1253-1-ND
Single Bipolar Transistors 1727-1253-1-ND
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

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Single Bipolar Transistors - 1727-1253-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-1253-2-ND
Single Bipolar Transistors 1727-1253-2-ND
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

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Single Bipolar Transistors - 1727-1253-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-1253-6-ND
Single Bipolar Transistors 1727-1253-6-ND
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC52-16PA,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC52-16PA,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC52-16PA,115
TRANS PNP 60V 1A 3HUSON

TRANS PNP 60V 1A 3HUSON

Supplier's Site
Transistor, Bipolar Rohs Compliant Nexperia - 28AK6305 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
28AK6305
Transistor, Bipolar Rohs Compliant Nexperia 28AK6305
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC52-16PA,115 276-BC52-16PA,115 1727-1253-1-ND BC52-16PA,115 28AK6305
Product Name 60 V, 1 A PNP medium power transistors 60V 1A 1650mW Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT1061 SOT1061 3-PowerUDFN 3-HUSON (2x2) TO-3
IC(max) 1000 milliamps 1000 milliamps
VCBO 60 volts
PD 1650 milliwatts
TJ -55 C (-67 F)
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