Nexperia B.V. N-channel vertical D-MOS logic level FET BSH105,235

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Saves PCB space due to small footprint Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for very low gate drive sources voltage Applications Battery powered applications High-speed digital interfaces
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Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Saves PCB space due to small footprint Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for very low gate drive sources voltage Applications Battery powered applications High-speed digital interfaces
Request a Quote
Datasheet
Datasheet Summary
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N-channel enhancement mode MOS transistor in a SOT23 surface-mount package, designed for battery-powered applications and high-speed digital interfacing with logic level gate drive compatibility. It has a drain-source voltage rating of 20 V, a continuous drain current of 1.05 A at 25 °C, and a very low threshold voltage of 0.4 V minimum. The on-state resistance is 250 mΩ maximum at VGS = 2.5 V and ID = 0.6 A. The device supports pulsed drain currents up to 4.2 A and operates over a temperature range of -55 °C to 150 °C. The SOT23 package provides a compact footprint for space-constrained designs.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode MOS transistor in a SOT23 surface-mount package, designed for battery-powered applications and high-speed digital interfacing with logic level gate drive compatibility. It has a drain-source voltage rating of 20 V, a continuous drain current of 1.05 A at 25 °C, and a very low threshold voltage of 0.4 V minimum. The on-state resistance is 250 mΩ maximum at VGS = 2.5 V and ID = 0.6 A. The device supports pulsed drain currents up to 4.2 A and operates over a temperature range of -55 °C to 150 °C. The SOT23 package provides a compact footprint for space-constrained designs.

Suppliers

Company
Product
Description
Supplier Links
N-channel vertical D-MOS logic level FET - BSH105,235 - Nexperia B.V.
Nijmegen, Netherlands
N-channel vertical D-MOS logic level FET
BSH105,235
N-channel vertical D-MOS logic level FET BSH105,235
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Saves PCB space due to small footprint Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for very low gate drive sources voltage Applications Battery powered applications High-speed digital interfaces

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

  • Saves PCB space due to small footprint
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
  • Suitable for very low gate drive sources voltage

Applications

  • Battery powered applications
  • High-speed digital interfaces
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BSH105,235TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH105,235TR-ND
Single FETs, MOSFETs 1727-BSH105,235TR-ND
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH105,235DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH105,235DKR-ND
Single FETs, MOSFETs 1727-BSH105,235DKR-ND
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH105,235CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH105,235CT-ND
Single FETs, MOSFETs 1727-BSH105,235CT-ND
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Singapore, Singapore
N-Channel MOSFET Transistor
278-BSH105,235
N-Channel MOSFET Transistor 278-BSH105,235
BSH105 - N-channel vertical D-MOS logic level FET TO-236 3-Pin Product overview: BSH105,235 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH105,235 can be used for catalog matching and distributor lookup.

BSH105 - N-channel vertical D-MOS logic level FET TO-236 3-Pin Product overview: BSH105,235 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH105,235 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH105,235 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH105,235
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH105,235
MOSFET N-CH 20V 1.05A TO236AB

MOSFET N-CH 20V 1.05A TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSH105,235 1727-BSH105,235TR-ND 278-BSH105,235 BSH105,235
Product Name N-channel vertical D-MOS logic level FET Single FETs, MOSFETs N-Channel MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
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