Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
MOSFET N-CH 60V 0.32A 6-Pin TSSOP Product overview: BSS138PS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.32A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.32A, TSSOP, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSS138PS,115 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.32A 6TSSOP
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024498-BSS138PS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 420mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 320mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 60V 0.32A 6TSSOP
60V 320mA 420mW 1.6Ω@10V,300mA 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS138PS,115 | 1727-6479-1-ND | 289-BSS138PS,115 | BSS138PS,115 | 1024498-BSS138PS,115 | BSS138PS,115 | BSS138PS,115 |
| Product Name | 60 V, 320 mA dual N-channel Trench MOSFET | FET, MOSFET Arrays | 60V 0.32A TSSOP MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138PS,115 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||
| IDSS | 320 milliamps | 320 milliamps | |||||
| VGS(off) | 1.2 volts | 1.5 volts |
