PNP Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted plastic package, with a 50 V collector-emitter voltage rating and 100 mA output current capability. Built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ simplify circuit design and reduce component count. Qualified to AEC-Q101 for automotive applications. Dimensions are 2.9 mm × 1.3 mm × 1 mm. Total power dissipation is 250 mW at 25 °C ambient temperature, with thermal resistance from junction to ambient of 500 K/W.
PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device(SMD) plastic package.
NPN complement: PDTC114YT-Q
Features and benefits
Applications
PDTA114YT-Q/SOT23/TO
PDTA114YT-Q/SOT23/TO
PDTA114YT-Q/SOT23/TO
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | PDTA114YT-QR | 1727-PDTA114YT-QRTR-ND |
| Product Name | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | Single, Pre-Biased Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
