PNP low VCEsat transistor in a SOT23 (TO-236AB) surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pitch. Rated for a collector-emitter voltage of -100 V and a continuous collector current of -1 A, with a peak collector current of -3 A limited by junction temperature. Features a collector-emitter saturation resistance of 170 to 320 mΩ at -1 A collector current and -100 mA base current. Total power dissipation is 300 mW with a standard footprint and 480 mW with a 1 cm collector pad. Qualified to AEC-Q101 for automotive applications.
PNP low VCEsat transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110T
Features and benefits
Applications
TRANS PNP 100V 1A TO-236AB
TRANS PNP 100V 1A TO-236AB
TRANS PNP 100V 1A TO-236AB
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | PBSS9110T-QR | 1727-PBSS9110T-QRTR-ND |
| Product Name | 100 V, 1 A PNP low VCEsat transistor | Single Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
