Nexperia B.V. 50 V, 3 A PNP low VCEsat transistor PBSS5350TH-QR

Description
PNP low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat generation High temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver
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Description
PNP low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat generation High temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a small SOT23 surface-mounted plastic package, measuring 2.9 mm by 1.3 mm by 1 mm. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -2 A, and a peak pulsed collector current of -5 A. The collector-emitter saturation resistance is 135 mΩ at -2 A collector current and -200 mA base current. It operates with a junction temperature up to 175 °C and is qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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PNP low VCEsat transistor in a small SOT23 surface-mounted plastic package, measuring 2.9 mm by 1.3 mm by 1 mm. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -2 A, and a peak pulsed collector current of -5 A. The collector-emitter saturation resistance is 135 mΩ at -2 A collector current and -200 mA base current. It operates with a junction temperature up to 175 °C and is qualified to AEC-Q101 for automotive applications.

Suppliers

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Product
Description
Supplier Links
50 V, 3 A PNP low VCEsat transistor - PBSS5350TH-QR - Nexperia B.V.
Nijmegen, Netherlands
50 V, 3 A PNP low VCEsat transistor
PBSS5350TH-QR
50 V, 3 A PNP low VCEsat transistor PBSS5350TH-QR
PNP low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat generation High temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver

PNP low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • Higher efficiency leading to less heat generation
  • High temperature applications up to 175 °C
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Power management
  • DC-to-DC conversion
  • Supply line switches
  • Battery charger switches
  • Peripheral drivers
  • Driver in low supply voltage applications (e.g. lamps and LEDs)
  • Inductive load driver
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS5350TH-QRTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5350TH-QRTR-ND
Single Bipolar Transistors 1727-PBSS5350TH-QRTR-ND
PBSS5350TH-Q/SOT23/T O-236AB

PBSS5350TH-Q/SOT23/TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5350TH-QRCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5350TH-QRCT-ND
Single Bipolar Transistors 1727-PBSS5350TH-QRCT-ND
PBSS5350TH-Q/SOT23/T O-236AB

PBSS5350TH-Q/SOT23/TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5350TH-QRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5350TH-QRDKR-ND
Single Bipolar Transistors 1727-PBSS5350TH-QRDKR-ND
PBSS5350TH-Q/SOT23/T O-236AB

PBSS5350TH-Q/SOT23/TO-236AB

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBSS5350TH-QR 1727-PBSS5350TH-QRTR-ND
Product Name 50 V, 3 A PNP low VCEsat transistor Single Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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